MicroWave Technology Announces Advanced GaAs pHEMT-Based Ultra-Broadband Driver MMIC Amplifier Up to
FREMONT, Calif.--(BUSINESS WIRE)-- MicroWave Technology Inc. (MwT), the RF division of IXYS Corporation (NAS: IXYS) , announced that it offers an advanced AlGaAs/InGaAs pHEMT-based MMIC ...
Palo Alto, Calif. — The ATF-511P8 enhanced-mode pHEMT (E-pHEMT) FET is optimized for wireless base stations operating at frequencies up to 6 GHz. At 2 GHz, this FET sports +30-dBm output power at 1-dB ...
Palo Alto, Calif. — The ATF-58143 enhanced-mode pHEMT (E-pHEMT) FET operates over the 450 MHz to 6 GHz band and is optimized for wireless base station designs. When running from a single 3-V supply ...
TORRANCE, CA--(Marketwired - May 19, 2014) - Global Communication Semiconductors, LLC (GCS), a pure-play III-V compound semiconductor wafer foundry, announced today that its proprietary P3 InGaP HBT ...
Designers of microwave power amplifiers and low-noise amplifiers have a new weapon: the ATF-501P8 enhancement-mode pseudomorphic high-electron-mobility field-effect transistor (E-pHEMT FET). The ...
Analog Devices has introduced a medium-power, distributed driver amplifier which operates between 24GHz and 35GHz. The HMC1131 amplifier provides 22dB of gain, +35dBm output IP3, and +24dBm of output ...
The SPF-3043, a dc to 10 GHz, low-noise gallium arsenide pHEMT component, claims to suitable for a wide range of low-noise amplifier applications in wireless-infrastructure equipment. The device has a ...
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