I R (International Rectifier), the first to build GaN (gallium-nitride) devices on silicon, has now introduced GaNpowIR, its first product on a GaN platform. GaN-device structures are not new; using a ...
Gallium nitride (GaN) is an ideal material for applications requiring high switching speeds and minimal power losses. While ...
EPC announces the EPC2102, 60 V and the EPC2103, 80 V enhancement-mode monolithic GaN transistor half bridges. By integrating two eGaN® power FETs into a single device, interconnect inductances and ...
EL SEGUNDO, Calif.--(BUSINESS WIRE)--Efficient Power Conversion Corporation (EPC) experts on the design and use of gallium nitride transistors will conduct a one-hour webinar sponsored by the IEEE ...
Characteristics of enhancement-mode (e-mode) GaN, such as positive temperature coefficient of RDS(ON) and a temperature-independent threshold voltage, make them excellent candidates for paralleling.
Have you used gallium-nitride (GaN) transistors in your designs yet? If not, now may be the time to give it some consideration. GaN devices have been around for several years now, but improved ...
The FINANCIAL — Panasonic Corporation on February 23 announced that it has developed an insulated-gate (MIS) gallium nitride (GaN) power transistor capable of continuous stable operation with no ...
GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN)—a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion products—announced today ...
OTTAWA, Feb. 28, 2018 (GLOBE NEWSWIRE) -- GaN Systems, the global leader in GaN power semiconductors, today made public the 120 A, 650 V GaN E-HEMT, extending its leadership with the industry’s most ...
Arrow Electronics is now carrying the GaN Systems range of gallium nitride (GaN) transistors in Europe, Middle East and Africa (EMEA). Arrow Electronics is now carrying the GaN Systems range of ...
They have almost 20% lower Rds(on) that the company’s previous generation of GaN devices, it said. With 5V on the gate, EPC2204 has a typical Rds(on) of 4.5mΩ, 5.7nC gate charge, 800pC gate-drain ...
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